Print Share/bookmark Carrier-mediated ferromagnetism in a magnetic topological insulator

A group of researchers in Japan and China identified the requirements for the development of new types of extremely low power consumption electric devices by studying Cr-doped (Sb, Bi)2Te3 thin films.

At extremely low temperatures, an electric current flows around the edge of the film without energy loss, and under no external magnetic field. This attractive phenomenon is due to the material’s ferromagnetic properties; however, so far, it has been unclear how the material gains this property. For the first time, researchers have revealed the mechanism by which this occurs. "Hopefully, this achievement will lead to the creation of novel materials that operate at room temperature in the future," said Akio Kimura, a professor at Hiroshima University and a member of the research group.

Nature Communications – Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3